? 2009 ixys corporation, all rights reserved symbol test conditions maximum ratings v ces t c = 25c to 150c 3000 v v cgr t j = 25c to 150c, r ge = 1m 3000 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 80 a i c110 t c = 110c 32 a i cm t c = 25c, 1ms 280 a ssoa v ge = 15v, t vj = 125c, r g = 10 i cm = 80 a (rbsoa) clamped inductive load v ces 2400 v p c t c = 25c 400 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque (to-247) 1.13/10 nm/lb.in. weight to-247 6 g to-268 4 g ds100118(02/09) IXBH32N300 ixbt32n300 v ces = 3000v i c110 = 32a v ce(sat) 3.2v high voltage, high gain bimosfet tm monolithic bipolar mos transistor features z high blocking voltage z international standard packages z low conduction losses advantages z low gate drive requirement z high power density applications: z switched-mode and resonant-mode power supplies z uninterruptible power supplies (ups) z laser generators z capacitor discharge circuits z ac switches preliminary technical information g = gate c = collector e = emitter tab = collector to-268 (ixbt) g e c (tab) to-247 (ixbh) g c e c (tab) symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0v 3000 v v ge(th) i c = 250 a, v ce = v ge 2.5 5.0 v i ces v ce = 0.8 ? v ces , v ge = 0v 50 a t j = 125c 2 ma i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 32a, v ge = 15v, note 1 2.8 3.2 v t j = 125c 3.5 v
ixys reserves the right to change limits, test conditions and dimensions. IXBH32N300 ixbt32n300 symbol test conditions characteristic values ( t j = 25c unless otherwise specified) min. typ. max. g fs i c = 32a, v ce = 10v, note 1 16 26 s c ies 3140 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 124 pf c res 40 pf q g 142 nc q ge i c = 32a, v ge = 15v, v ce = 1000v 20 nc q gc 57 nc t d(on) 50 ns t r 185 ns t d(off) 160 ns t f 720 ns t d(on) 58 ns t r 515 ns t d(off) 165 ns t f 630 ns r thjc 0.31 c/w r thcs (to-247) 0.21 c/w note 1: pulse test, t 300 s, duty cycle, d 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc e ? p to-247 (ixbh) outline 1 2 3 terminals: 1 - gate 2 - drain 3 - source tab - drain resistive switching times, t j = 125c i c = 32a, v ge = 15v v ce = 1250v, r g = 2 resistive switching times, t j = 25c i c = 32a, v ge = 15v v ce = 1250v, r g = 2 reverse diode symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. v f i f = 32a, v ge = 0v 2.1 v t rr 1.5 s i rm 33 a i f = 16a, v ge = 0v, -di f /dt = 100a/ s v r = 100v, v ge = 0v to-268 (ixbt) outline preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2009 ixys corporation, all rights reserved IXBH32N300 ixbt32n300 fig. 1. output characteristics @ 25oc 0 5 10 15 20 25 30 35 40 45 50 55 60 65 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v ce - volts i c - amperes v ge = 25v 20v 15v 10v 5v fig. 2. extended output characteristics @ 25oc 0 50 100 150 200 250 300 350 400 450 500 0 2 4 6 8 101214161820 v ce - volts i c - amperes v ge = 25v 10v 15v 5v 20v fig. 3. output characteristics @ 125oc 0 5 10 15 20 25 30 35 40 45 50 55 60 65 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v ce - volts i c - amperes v ge = 25v 20v 15v 10v 5v fig. 4. dependence of v ce(sat) on junction temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 64a i c = 32a i c = 16a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 5 7 9 11 13 15 17 19 21 23 25 v ge - volts v ce - volts i c = 64a t j = 25oc 16a 32a fig. 6. input admittance 0 10 20 30 40 50 60 70 80 90 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 v ge - volts i c - amperes t j = 125oc 25oc - 40oc ixys ref: b_32n300(8p)03-02-09
ixys reserves the right to change limits, test conditions and dimensions. IXBH32N300 ixbt32n300 fig. 7. transconductance 0 5 10 15 20 25 30 35 40 45 0 102030405060708090100 i c - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. gate charge 0 2 4 6 8 10 12 14 16 0 20 40 60 80 100 120 140 q g - nanocoulombs v ge - volts v ce = 1kv i c = 32a i g = 10ma fig. 11. reverse-bias safe operating area 0 10 20 30 40 50 60 70 80 90 500 1000 1500 2000 2500 3000 v ce - volts i c - amperes t j = 125oc r g = 10 ? dv / dt < 10v / ns fig. 10. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res fig. 12. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 8. forward voltage drop of intrinsic diode 0 10 20 30 40 50 60 70 80 90 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v f - volts i f - amperes t j = 125oc t j = 25oc
? 2009 ixys corporation, all rights reserved IXBH32N300 ixbt32n300 fig. 14. resistive turn-on rise time vs. drain current 0 100 200 300 400 500 600 700 800 15 20 25 30 35 40 45 50 55 60 65 i c - amperes t r - nanoseconds r g = 2 ? v ge = 15v v ce = 1250v t j = 125oc t j = 25oc fig. 15. resistive turn-on switching times vs. gate resistance 350 400 450 500 550 600 650 23456789101112131415 r g - ohms t r - nanoseconds 50 55 60 65 70 75 80 t d(on) - nanoseconds t r t d(on) - - - - t j = 125oc, v ge = 15v v ce = 1250v i c = 32a i c = 64a fig. 16. resistive turn-off switching times vs. junction temperature 200 300 400 500 600 700 800 900 1000 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 120 130 140 150 160 170 180 190 200 t d(off) - nanoseconds t f t d(off) - - - - r g = 2 ? , v ge = 15v v ce = 1250v i c = 64a i c = 32a fig. 17. resistive turn-off switching times vs. drain current 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 15 20 25 30 35 40 45 50 55 60 65 i c - amperes t f - nanoseconds 110 120 130 140 150 160 170 180 190 200 210 220 230 t d(off) - nanoseconds t f t d(off) - - - - r g = 2 ? , v ge = 15v v ce = 1250v t j = 125oc, 25oc fig. 13. resistive turn-on rise time vs. junction temperature 0 100 200 300 400 500 600 700 800 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 2 ? v ge = 15v v ce = 1250v i c = 32a i c = 64a fig. 18. resistive turn-off switching times vs. gate resistance 200 300 400 500 600 700 800 900 1000 2 3 4 5 6 7 8 9 10 11 12 13 14 15 r g - ohms t f - nanoseconds 50 100 150 200 250 300 350 400 450 t d(off) - nanoseconds t f t d(off ) - - - - t j = 125oc, v ge = 15v v ce = 1250v i c = 64a i c = 32a ixys ref: b_32n300(8p)03-02-09
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